FTM Board Club
Renesas
HIP2210EVAL1Z
100V, 3A Source, 4A Sink, High-Frequency Half-Bridge NMOS FET Drivers with Tri-Level PWM Input and Adjustable Dead Time

The HIP2210EVAL1Z evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2210 100V, 3A source, 4A sink, high frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator.

The HIP2210 half-bridge driver is offered in a 10 Ld DFN package (with enhanced thermal EPAD). The HIP2210EVAL1Z evaluation board operates from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and low-side MOSFETs in a 100V half-bridge configuration ICs.

Related board available: HIP2211EVAL2Z 

Features
  • 3A source and 4A sink NMOS gate drivers
  • Internal level shifter and bootstrap diode for gate driver on high-side NFET
  • Up to 100V high-side bootstrap reference
  • 6V to 18V bias supply operation
  • Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation