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Very Low Stray Inductance Phase Leg SiC

The MSCSM120AM042CT6LIAG device is a 1200 V, 495 A full Silicon Carbide power module.



The following are the features of MSCSM120AM042CT6LIAG device:

• SiC power MOSFET

◦ Low RDS(on)

◦ High temperature performance

• SiC Schottky diode

◦ Zero reverse recovery

◦ Zero forward recovery

◦ Temperature independent switching behavior

◦ Positive temperature coefficient on VF

• Very low stray inductance

• Internal thermistor for temperature monitoring

• M4 and M5 power connectors

• M2.5 signals connectors

• AlN substrate for improved thermal performance